• Part: BAS29
  • Description: General purpose controlled avalanche double diodes
  • Category: Diode
  • Manufacturer: NXP Semiconductors
  • Size: 74.19 KB
Download BAS29 Datasheet PDF
NXP Semiconductors
BAS29
BAS29 is General purpose controlled avalanche double diodes manufactured by NXP Semiconductors.
Features - Small plastic SMD package - Switching speed: max. 50 ns - General application - Continuous reverse voltage: max. 90 V - Repetitive peak reverse voltage: max. 110 V - Repetitive peak forward current: max. 600 m A - Repetitive peak reverse current: max. 600 m A. PINNING DESCRIPTION BAS31 BAS35 1 anode anode cathode (k1) 2 not connected cathode cathode (k2) 3 cathode mon connection mon anode APPLICATIONS - General purpose switching in e.g. surface mounted circuits. handbook, halfpa2ge 1 2 DESCRIPTION General purpose switching diodes fabricated in planar technology, and encapsulated in small rectangular plastic SMD SOT23 packages. The BAS29 consists of a single diode. The BAS31 has two diodes in series. The BAS35 has two diodes with a mon anode. MARKING TYPE NUMBER BAS29 BAS31 BAS35 MARKING CODE(1) L20 or ∗A8 L21 or ∗V1 L22 or ∗V2 Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. ∗ = W : Made in China. 3 a. Simplified outline. 3 c. BAS31 diode. 2 n.c. 3 b. BAS29 diode. 3 d. BAS35...