BAS29
BAS29 is General purpose controlled avalanche double diodes manufactured by NXP Semiconductors.
Features
- Small plastic SMD package
- Switching speed: max. 50 ns
- General application
- Continuous reverse voltage: max. 90 V
- Repetitive peak reverse voltage: max. 110 V
- Repetitive peak forward current: max. 600 m A
- Repetitive peak reverse current: max. 600 m A.
PINNING
DESCRIPTION
BAS31
BAS35
1 anode anode cathode (k1)
2 not connected cathode cathode (k2)
3 cathode mon connection mon anode
APPLICATIONS
- General purpose switching in e.g. surface mounted circuits. handbook, halfpa2ge
1 2
DESCRIPTION
General purpose switching diodes fabricated in planar technology, and encapsulated in small rectangular plastic SMD SOT23 packages. The BAS29 consists of a single diode. The BAS31 has two diodes in series. The BAS35 has two diodes with a mon anode.
MARKING
TYPE NUMBER BAS29 BAS31 BAS35
MARKING CODE(1) L20 or ∗A8 L21 or ∗V1 L22 or ∗V2
Note
1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. ∗ = W : Made in China.
3 a. Simplified outline.
3 c. BAS31 diode.
2 n.c.
3 b. BAS29 diode.
3 d. BAS35...