NXP Semiconductors BAT81
The diode is suitable for mounting on a 2 E (5.08 mm) pitch.| Part No. | BAT81 |
|---|---|
| Datasheet | BAT81 Download |
| Manufacturer |  NXP Semiconductors |
| Description | Schottky barrier diodes |
| Buy | Stock & Price |
FEATURES
● Low forward voltage● High breakdown voltage
● Guard ring protected
● Hermetically-sealed leaded glass package
● Low diode capacitance. k handbook, halfpage BAT81; BAT82; BAT83
DESCRIPTION
Planar Schottky barrier diode with an integrated protection ring against static discharges, encapsulated in a hermetically-sealed subminiature SOD68 (DO-34) package. aAPPLICATIONS
MAM193● Ultra high-speed switching
● Voltage clamping
● Protection circuits
● Blocking diodes. Fig.1 Simplified outline (SOD68; DO-34), pin configuration and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR BAT81 BAT82 BAT83 IF IFRM IFSM Tstg Tj continuous forward current repetitive peak forward current non-repetitive peak forward current storage temperature junction temperature tp ≤ 1 s; δ ≤ 0.5 tp ≤ 10 ms PARAMETER continuous reverse voltage − − − − − − −65 − 40 50 60 30 150 500 150 125 V V V mA mA mA °C °C CONDITIONS MIN. MAX. UNIT 1996 Mar 20 2 Philips Semiconductors Product specification Schottky barrier diodes
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
