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BAT81 - Schottky barrier diodes

General Description

Planar Schottky barrier diode with an integrated protection ring against static discharges, encapsulated in a hermetically-sealed subminiature SOD68 (DO-34) package.

The diode is suitable for mounting on a 2 E (5.08 mm) pitch.

Ultra high-speed switching V

Key Features

  • Low forward voltage.
  • High breakdown voltage.
  • Guard ring protected.
  • Hermetically-sealed leaded glass package.
  • Low diode capacitance. k handbook, halfpage BAT81; BAT82; BAT83.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D050 BAT81; BAT82; BAT83 Schottky barrier diodes Product specification Supersedes data of July 1991 1996 Mar 20 Philips Semiconductors Product specification Schottky barrier diodes FEATURES • Low forward voltage • High breakdown voltage • Guard ring protected • Hermetically-sealed leaded glass package • Low diode capacitance. k handbook, halfpage BAT81; BAT82; BAT83 DESCRIPTION Planar Schottky barrier diode with an integrated protection ring against static discharges, encapsulated in a hermetically-sealed subminiature SOD68 (DO-34) package. The diode is suitable for mounting on a 2 E (5.08 mm) pitch. a APPLICATIONS MAM193 • Ultra high-speed switching • Voltage clamping • Protection circuits • Blocking diodes. Fig.