NXP Semiconductors BC516
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later.| Part No. | BC516 |
|---|---|
| Datasheet | BC516 Download |
| Manufacturer |  NXP Semiconductors |
| Description | PNP Darlington transistor |
| Buy | Stock & Price |
FEATURES
● High current (max. 500 mA)● Low voltage (max. 30 V)
● Very high DC current gain (min. 30000).
APPLICATIONS
● Where very high amplification is required.DESCRIPTION
PNP Darlington transistor in a TO-92; SOT54 plastic package. NPN complement: BC517. PINNING PIN 1 2 3 emitter base collectorDESCRIPTION
handbook, halfpage 1 2 3 23 TR1 TR2 1 MAM303 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCES VEBO IC ICM IB Ptot Tstg Tj Tamb PARAMETER CONDITIONS collector-base voltage (open emitter) open emitter collector-emitter voltage emitter-base voltage VBE = 0 open collector collector current (DC) peak collector current base current (DC) total power dissipation storage temperature Tamb ≤ 25 °C; note 1 junction temperature operating ambient temperature Note 1. Transistor mounted on an FR4 printed-circuit board. MIN. − − − − − − − −65 − −65 MAX. −40 −30 −10 −500 −800 −100 500 +150 150 +15...
