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BC516
BC516
PNP Darlington Transistor
• This device is designed for applications reguiring extremely high current gain at currents to 1mA.
• Sourced from process 61.
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
VCEO VCBO VEBO IC PD TJ, TSTG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
- Continuous
Total Power Dissipation TA = 25°C Operating and Storage Junction Temperature Range
1 TO-92 1. Collector 2. Base 3. Emitter
Value 30 40 10 1 625
-55 ~ +150
Units V V V A
mW °C
Electrical Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min. Typ. Max.
BC516 Datasheet
