Siemens BC516
PNP Silicon Darlington Transistor
| Part No. | BC516 |
|---|---|
| Datasheet | BC516 Download |
| Manufacturer |  Siemens |
| Description | PNP Silicon Darlington Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TC = 66 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient Junction - case2) Symbol VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg Values Unit 30 V 40 10 500 mA 800 100 200 625 mW 150 ˚C – 65 … + 150 Rth JA Rth JC ≤ 200 ≤ 135 K/W 1) For detailed information see chapter Package Outlines. 2) Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm. Semiconductor Group 1 5.91 BC 516ELECTRICAL CHARACTERISTICS
at TA = 25 ˚C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 10 mA Collector-base breakdown voltage IC = 100 µA Emitter-base breakdown voltage IE = 10 µA Collector cutoff current VCB = 30 V VCB = 30 V, TA = 150 ˚C Emitter cutoff current VEB = 4 V DC current gain IC = 20 mA; VCE = 2 V Collector-emitter saturation voltage1)...
