NXP Semiconductors BCX19
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later.FEATURES
● High current (500 mA)● Low voltage (45 V).
APPLICATIONS
● General purpose amplification● Saturated switching and driver applications.
DESCRIPTION
NPN transistor in a SOT23 plastic package. PNP complement: BCX17. MARKING 1 2 MAM255 BCX19 PINNING PIN 1 2 3 base emitter collectorDESCRIPTION
handbook, halfpage 3 3 1 2 TYPE NUMBER BCX19 Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) Top view U8∗ Fig.1 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base; IC = 10 mA open collector − − − − − − − −65 − −65 MIN.