NXP Semiconductors BF1118R
The BF1118, BF1118R, BF1118W and BF1118WR are encapsulated in the SOT143B, SOT143R, SOT343N and SOT343R respectively. The low loss and high isolation capabilities of these devices provide excellent RF switching functions. The gate of the MOSFET can be isolated from ground with the diode, resulting in low losses.| Part No. | BF1118R |
|---|---|
| Datasheet | BF1118R Download |
| Manufacturer |  NXP Semiconductors |
| Description | Silicon RF switches |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● Specially designed for low loss RF switching up to 1 GHz 1.3APPLICATIONS
● Various RF switching applications such as:● Passive loop through for VCR tuner
● Transceiver switching 1.4 Quick reference data Table 1. Symbol Lins(on) Quick reference data Parameter on-state insertion loss ISLoff off-state isolation RDSon VGS(p) drain-source on-state resistance gate-source pinch-off voltage [1] IF = diode forward current. Conditions RS = RL = 50 ; f 1 GHz; VSK = VDK = 0 V; IF = 0 mA RS = RL = 50 ; f 1 GHz; VSK = VDK = 3.3 V; IF = 1 mA VKS = 0 V; ID = 1 mA VDS = 1 V; ID = 20 A Min Typ Max Unit [1] - - 2.5 dB 30 - - dB - 15 23.3 - 2 2.44 V NXP Semiconductors BF1118(R); BF1118W(R) Silicon RF switches 2. Pinning information Table 2. Pinning Pin
DESCRIPTION
BF1118 (SOT143B) 1 FET gate; diode anode 2 diode cathode 3 source 4 drain Simplified outline [1] [1] BF1118R (SOT143R) 1 FET gate; diode anode 2 diode cathode 3 source 4 drain [1] [1] BF1118W (SOT343N) 1 FET...
