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BF1118WR Datasheet

Manufacturer: NXP Semiconductors

This datasheet includes multiple variants, all published together in a single manufacturer document.

BF1118WR datasheet preview

Datasheet Details

Part number BF1118WR
Datasheet BF1118WR BF1118 Datasheet (PDF)
File Size 170.33 KB
Manufacturer NXP Semiconductors
Description Silicon RF switches
BF1118WR page 2 BF1118WR page 3

BF1118WR Overview

These switches are a bination of a depletion type Field-Effect Transistor (FET) and a band-switching diode. The BF1118, BF1118R, BF1118W and BF1118WR are encapsulated in the SOT143B, SOT143R, SOT343N and SOT343R respectively. The low loss and high isolation capabilities of these devices provide excellent RF switching functions.

BF1118WR Key Features

  • Specially designed for low loss RF switching up to 1 GHz

BF1118WR Applications

  • Various RF switching applications such as:  Passive loop through for VCR tuner  Transceiver switching
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More Datasheets from NXP Semiconductors

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Part Number Description
BF1118W Silicon RF switches
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BF1118R Silicon RF switches
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BF1100R Dual-gate MOS-FETs
BF1100WR Dual-gate MOS-FET
BF1101 N-channel dual-gate MOS-FETs
BF1101R N-channel dual-gate MOS-FETs
BF1101WR N-channel dual-gate MOS-FETs
BF1102 Dual N-channel dual gate MOS-FET

BF1118WR Distributor

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