Datasheet4U Logo Datasheet4U.com

BF1118W - Silicon RF switches

Download the BF1118W datasheet PDF. This datasheet also covers the BF1118 variant, as both devices belong to the same silicon rf switches family and are provided as variant models within a single manufacturer datasheet.

General Description

These switches are a combination of a depletion type Field-Effect Transistor (FET) and a band-switching diode.

The BF1118, BF1118R, BF1118W and BF1118WR are encapsulated in the SOT143B, SOT143R, SOT343N and SOT343R respectively.

Key Features

  • Specially designed for low loss RF switching up to 1 GHz 1.3.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BF1118-NXP.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
BF1102R Dual N-channel dual gate MOS-FETs Philips
BF115 2.0mm Pitch Socket Global Connector Technology
BF117 NPN SIlicon Transistors ETC
BF118 NPN SIlicon Transistors ETC
BF119 NPN SIlicon Transistors ETC

Other Datasheets by NXP Semiconductors

Part Number Description
BF1118WR Silicon RF switches
BF1118 Silicon RF switches
BF1118R Silicon RF switches
BF1100 Dual-gate MOS-FETs
BF1100R Dual-gate MOS-FETs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BF1118; BF1118R; BF1118W; BF1118WR Silicon RF switches Rev. 3 — 14 November 2014 Product data sheet 1. Product profile 1.1 General description These switches are a combination of a depletion type Field-Effect Transistor (FET) and a band-switching diode. The BF1118, BF1118R, BF1118W and BF1118WR are encapsulated in the SOT143B, SOT143R, SOT343N and SOT343R respectively. The low loss and high isolation capabilities of these devices provide excellent RF switching functions. The gate of the MOSFET can be isolated from ground with the diode, resulting in low losses. Integrated diodes between gate and source and between gate and drain protect against excessive input voltage surges. 1.2 Features and benefits  Specially designed for low loss RF switching up to 1 GHz 1.