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BF1206F Datasheet

Manufacturer: NXP Semiconductors
BF1206F datasheet preview

Datasheet Details

Part number BF1206F
Datasheet BF1206F_PhilipsSemiconductors.pdf
File Size 320.86 KB
Manufacturer NXP Semiconductors
Description Dual N-channel dual gate MOSFET
BF1206F page 2 BF1206F page 3

BF1206F Overview

The BF1206F is a bination of two different dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable Direct Current (DC) stabilization and a very good cross-modulation performance during Automatic Gain Control (AGC).

BF1206F Key Features

  • Two low noise gain controlled amplifiers in a single package
  • Superior cross-modulation performance during AGC
  • High forward transfer admittance
  • High forward transfer admittance to input capacitance ratio
  • Suited for 3 volt

BF1206F Applications

  • Gain controlled low noise amplifiers for Very High Frequency (VHF) and Ultra High Frequency (UHF) applications with 3 V supply voltage, such as digital and anal
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More Datasheets from NXP Semiconductors

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Part Number Description
BF1206 Dual N-channel dual-gate MOS-FET
BF1201 N-channel dual-gate PoLo MOS-FETs
BF1201R N-channel dual-gate PoLo MOS-FETs
BF1201WR N-channel dual-gate PoLo MOS-FETs
BF1202 N-channel dual-gate PoLo MOS-FETs
BF1202R N-channel dual-gate PoLo MOS-FETs
BF1202WR N-channel dual-gate PoLo MOS-FETs
BF1203 Dual N-channel dual gate MOS-FET
BF1204 Dual N-channel dual gate MOS-FET
BF1205 Dual N-channel dual gate MOS-FET

BF1206F Distributor

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