BF1206F
description
The BF1206F is a bination of two different dual gate MOSFET amplifiers with shared source and gate2 leads.
The source and substrate are interconnected. Internal bias circuits enable Direct Current (DC) stabilization and a very good cross-modulation performance during Automatic Gain Control (AGC). Integrated diodes between the gates and source protect against excessive input voltage surges. The transistor is encapsulated in a SOT666 micro-miniature plastic package.
This device is sensitive to Electro Static Discharge (ESD). Therefore care should be taken during transport and handling.
1.2 Features and benefits
- Two low noise gain controlled amplifiers in a single package
- Superior cross-modulation performance during AGC
- High forward transfer admittance
- High forward transfer admittance to input capacitance ratio
- Suited for 3 volt applications
1.3 Applications
- Gain controlled low noise amplifiers for Very High Frequency (VHF) and Ultra High Frequency (UHF)...
