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BF1206F - Dual N-channel dual gate MOSFET

Datasheet Summary

Description

The BF1206F is a combination of two different dual gate MOSFET amplifiers with shared source and gate2 leads.

The source and substrate are interconnected.

Internal bias circuits enable Direct Current (DC) stabilization and a very good cross-modulation performance during Automatic Gain Control (AGC).

Features

  • Two low noise gain controlled amplifiers in a single package.
  • Superior cross-modulation performance during AGC.
  • High forward transfer admittance.
  • High forward transfer admittance to input capacitance ratio.
  • Suited for 3 volt.

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Datasheet Details

Part number BF1206F
Manufacturer NXP
File Size 320.86 KB
Description Dual N-channel dual gate MOSFET
Datasheet download datasheet BF1206F Datasheet
Additional preview pages of the BF1206F datasheet.

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Full PDF Text Transcription

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SOT666 BF1206F Dual N-channel dual gate MOSFET Rev. 2 — 7 September 2011 Product data sheet 1. Product profile CAUTION 1.1 General description The BF1206F is a combination of two different dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable Direct Current (DC) stabilization and a very good cross-modulation performance during Automatic Gain Control (AGC). Integrated diodes between the gates and source protect against excessive input voltage surges. The transistor is encapsulated in a SOT666 micro-miniature plastic package. This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.
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