BF1208D Datasheet | NXP Semiconductors

.. Dual N-channel dual gate MOSFET Rev. 01 - 16 May 2007 Product data sheet 1. Product profile 1.1 General description The BF1208D is a bination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated switch. The integrated switch is operated by the gate1 bias of amplifier B. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross modulation performance during Automatic Gain Control (AGC). Integrated diodes between the gates and source protect against excessive input voltage surges. The transistor has a SOT666 micro-miniature plastic package. CAUTION This device is sensitive to Electro Static Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features I Two low noise gain controlled amplifiers in a single package. One with a fully integrated bias and one with a partly integrated bias I Internal switch to save external ponents I Superior cross modulation performance during AGC I High forward transfer admittance I High forward transfer admittance to input capacitance ratio 1.3 Applications I Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply voltage N digital and analog television tuners N professional munication equipment .. NXP Semiconductors Dual N-channel dual gate MOSFET 1.4 Quick reference data Table 1. Quick reference data Per MOSFET unless otherwise specified. Symbol Parameter VDS ID Ptot |yfs| drain-source voltage drain current total power dissipation forward transfer admittance Conditions DC DC Tsp ≤ 109 °C f = 100 MHz; Tj = 25 °C amplifier A; ID = 19 m A amplifier B; ID = 15 m A Ciss(G1) input capacitance at gate1 f = 100 MHz amplifier A amplifier B Crss NF reverse transfer capacitance f = 100 MHz noise figure YS = YS(opt) amplifier A; f = 400 MHz amplifier B; f = 800 MHz Xmod cross modulation input level for k = 1 %; fw = 50 MHz; funw = 60 MHz at 40 d B...