BF1208 Datasheet | NXP Semiconductors

.. Dual N-channel dual gate MOSFET Rev. 01 - 16 March 2005 Product data sheet 1. Product profile 1.1 General description The BF1208 is a bination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated switch. The integrated switch is operated by the gate1 bias of amplifier B. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross-modulation performance during Automatic Gain Control (AGC). Integrated diodes between the gates and source protect against excessive input voltage surges. The transistor has a SOT666 micro-miniature plastic package. CAUTION This device is sensitive to Electro Static Discharge (ESD). Therefore care should be taken during transport and handling. MSC895 1.2 Features s Two low noise gain controlled amplifiers in a single package. One with a fully integrated bias and one with a partly integrated bias s Internal switch to save external ponents s Superior cross-modulation performance during AGC s High forward transfer admittance s High forward transfer admittance to input capacitance ratio 1.3 Applications s Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply voltage x digital and analog television tuners x professional munication equipment .. Philips Semiconductors Dual N-channel dual gate MOSFET 1.4 Quick reference data Table 1: Quick reference data Per MOSFET unless otherwise specified. Symbol Parameter VDS ID Ptot |yfs| drain-source voltage (DC) drain current (DC) total power dissipation forward transfer admittance Tsp ≤ 109 °C f = 1 MHz amplifier A; ID = 19 m A amplifier B; ID = 13 m A Ciss(G1) input capacitance at gate1 f = 1 MHz amplifier A amplifier B Crss NF Xmod reverse transfer capacitance f = 1 MHz noise figure cross-modulation amplifier A; f = 400 MHz amplifier B; f = 800 MHz input level for k = 1 % at 40 d B AGC amplifier A amplifier B Tj [1] [1] Conditions Min 26...