BF547W Datasheet | NXP Semiconductors

FEATURES - Stable oscillator operation - High current gain - Good thermal stability. APPLICATIONS It is primarily intended as a mixer, oscillator and IF amplifier in UHF and VHF tuners. DESCRIPTION Silicon NPN transistor in a plastic SOT323 (S-mini) package. The BF547W uses the same crystal as the SOT23 version, BF547. PINNING PIN 1 2 3 base emitter collector DESCRIPTION handbook, 2 columns 1 Top view Marking code: E2. MBC870 Fig.1 SOT323 QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot h FE Cre f T GUM PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain feedback capacitance transition frequency maximum unilateral power gain up to Ts = 63 °C; note 1 IC = 2 m A; VCE = 10 V IC = 0; VCB = 10 V; f = 1 MHz IC = 15 m A; VCE = 10 V; f = 500 MHz IC = 1 m A; VCE = 10 V; f = 100 MHz; Tamb = 25 °C CONDITIONS open emitter open base - - - - 40 - 0.8 - MIN. - - - - 95 1 1.2 20 TYP. MAX. 30 20 50 300 250 - 1.6 - p F GHz d B UNIT V V m A m W LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature up to Ts = 63 °C; note 1 CONDITIONS open emitter open base open collector - - - - - - 65 - MIN. 30 20 3 50 300 +150 +150 MAX. V V V m A m W °C °C UNIT Note to the “Quick reference data” and “Limiting values” 1. Ts is the temperature at the soldering point of the collector pin. June 1994 Philips Semiconductors Product specification NPN 1 GHz wideband transistor THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector pin. CHARACTERISTICS Tj = 25 °C (unless otherwise specified). SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO h FE Cre f T GUM Note PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage emitter-base...