BFG31 Datasheet | NXP Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET BFG31 PNP 5 GHz wideband transistor Product specification Supersedes data of November 1992 1995 Sep 12 NXP Semiconductors PNP 5 GHz wideband transistor Product specification Features - High output voltage capability - High gain bandwidth product - Good thermal stability - Gold metallization ensures excellent reliability. DESCRIPTION PNP planar epitaxial transistor mounted in a plastic SOT223 envelope. It is intended for wideband amplifier applications. NPN plement is the BFG97. PINNING PIN 1 2 3 4 DESCRIPTION emitter base emitter collector QUICK REFERENCE DATA SYMBOL VCEO IC Ptot h FE PARAMETER collector-emitter voltage DC collector current total power dissipation DC current gain f T transition frequency GUM Vo maximum unilateral power gain output voltage CONDITIONS open base up to Ts = 135 C ; note 1 IC = - 70 m A; VCE = - 10 V; Tamb = 25 C IC = - 70 m A; VCE = - 10 V; f = 500 MHz; Tamb = 25 C IC = - 70 m A; VCE = - 10 V; f = 800 MHz; Tamb = 25 C IC = - 100 m A; VCE...