NXP Semiconductors BFG31
PNP 5GHz wideband transistor
| Part No. | BFG31 |
|---|---|
| Datasheet | BFG31 Download |
| Manufacturer |  NXP Semiconductors |
| Description | PNP 5GHz wideband transistor |
| Buy | Stock & Price |
FEATURES
● High output voltage capability● High gain bandwidth product
● Good thermal stability
● Gold metallization ensures excellent reliability.
DESCRIPTION
PNP planar epitaxial transistor mounted in a plastic SOT223 envelope. It is intended for wideband amplifier applications. NPN complement is the BFG97. PINNING PIN 1 2 3 4DESCRIPTION
emitter base emitter collector QUICK REFERENCE DATA SYMBOL VCEO IC Ptot hFE PARAMETER collector-emitter voltage DC collector current total power dissipation DC current gain fT transition frequency GUM Vo maximum unilateral power gain output voltage CONDITIONS open base up to Ts = 135 C ; note 1 IC = 70 mA; VCE = 10 V; Tamb = 25 C IC = 70 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 C IC = 70 mA; VCE = 10 V; f = 800 MHz; Tamb = 25 C IC = 100 mA; VCE = 10 V; RL = 75 ; Tamb = 25 C LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter vo...
