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BFG310W/XR
NPN 14 GHz wideband transistor
Rev. 01 — 2 February 2005 Product data sheet
1. Product profile
1.1 General description
NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package.
1.2 Features
s s s s High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability
1.3 Applications
s Intended for Radio Frequency (RF) front end applications in the GHz range, such as: x analog and digital cellular telephones x cordless telephones (Cordless Telephone (CT), Personal Communication Network (PCN), Digital Enhanced Cordless Telecommunications (DECT), etc.) x radar detectors x pagers x Satellite Antenna TeleVision (SATV) tuners
1.
BFG310W Datasheet
