BFG310W Datasheet | NXP Semiconductors

.. BFG310W/XR NPN 14 GHz wideband transistor Rev. 01 - 2 February 2005 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. 1.2 Features s s s s High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability 1.3 Applications s Intended for Radio Frequency (RF) front end applications in the GHz range, such as: x analog and digital cellular telephones x cordless telephones (Cordless Telephone (CT), Personal munication Network (PCN), Digital Enhanced Cordless Telemunications (DECT), etc.) x radar detectors x pagers x Satellite Antenna Tele Vision (SATV) tuners 1.4 Quick reference data Table 1: VCBO VCEO IC Ptot h FE CCBS f T Quick reference data Conditions open emitter open base Tsp ≤ 145 °C IC = 5 m A; VCE = 3 V; Tj = 25 °C VCB = 5 V; f = 1 MHz; emitter grounded IC = 5 m A; VCE = 3 V; f = 1 GHz; Tamb = 25 °C [1] Symbol Parameter collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain collector-base capacitance transition frequency Min 60 - Typ 100 0.17 14 Max 15 6 10 60 200 0.3 - Unit V V m A m W p F GHz .. Philips Semiconductors BFG310W/XR NPN 14 GHz wideband transistor Quick reference data …continued Conditions IC = 5 m A; VCE = 3 V; f = 1.8 GHz; Tamb = 25 °C IC = 5 m A; VCE = 3 V; f = 1.8 GHz; Tamb = 25 °C; ZS = ZL = 50 Ω Γs = Γopt; IC = 1 m A; VCE = 3 V; f = 2 GHz Min Typ 18 14 Max Unit d B d B maximum stable gain insertion power gain Table 1: MSG |s21|2 Symbol Parameter NF noise figure - 1 - d B [1] Tsp is the temperature at the soldering point of the collector...