NXP Semiconductors BFG35
NPN 4 GHz wideband transistor
| Part No. | BFG35 |
|---|---|
| Datasheet | BFG35 Download |
| Manufacturer |  NXP Semiconductors |
| Description | NPN 4 GHz wideband transistor |
| Buy | Stock & Price |
DESCRIPTION
NPN planar epitaxial transistor mounted in a plastic SOT223 envelope, intended for wideband amplifier applications. It features high output voltage capabilities. PINNING PIN 1 2 3 4DESCRIPTION
emitter base emitter collector lfpage 4 1 Top view 23 MSB002 - 1 Fig.1 SOT223. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS VCEO IC Ptot hFE fT GUM Vo collector-emitter voltage open base DC collector current total power dissipation DC current gain up to Ts = 135 C (note 1) IC = 100 mA; VCE = 10 V; Tj = 25 C transition frequency IC = 100 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 C maximum unilateral power gain IC = 100 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 C IC = 100 mA; VCE = 10 V; f = 800 MHz; Tamb = 25 C output voltage IC = 100 mA; VCE = 10 V; dim = 60 dB; RL = 75 ; f(p+qr) = 793.25 MHz; Tamb = 25 C MIN. 25 TYP. 70 4 15 11 750 MAX. UNIT 18 V 150 mA 1W GHz dB dB mV LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMB...
