BFG35 Datasheet | NXP Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET BFG35 NPN 4 GHz wideband transistor Product specification Supersedes data of 1995 Sep 12 1999 Aug 24 NXP Semiconductors NPN 4 GHz wideband transistor Product specification DESCRIPTION NPN planar epitaxial transistor mounted in a plastic SOT223 envelope, intended for wideband amplifier applications. It Features high output voltage capabilities. PINNING PIN 1 2 3 4 DESCRIPTION emitter base emitter collector lfpage Top view MSB002 - 1 Fig.1 SOT223. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS VCEO IC Ptot h FE f T Vo collector-emitter voltage open base DC collector current total power dissipation DC current gain up to Ts = 135 C (note 1) IC = 100 m A; VCE = 10 V; Tj = 25 C transition frequency IC = 100 m A; VCE = 10 V; f = 500 MHz; Tamb = 25 C maximum unilateral power gain IC = 100 m A; VCE = 10 V; f = 500 MHz; Tamb = 25 C IC = 100 m A; VCE = 10 V; f = 800 MHz; Tamb = 25 C output voltage IC = 100 m A; VCE = 10 V; dim = - 60 d B; RL = 75 ; f(p+q- r) = 793.25 MHz; Tamb = 25 C MIN. - -...