NXP Semiconductors BFQ34
The device also features high output voltage capabilities. The product is entirely safe provided that the BeO disc is not damaged.| Part No. | BFQ34 |
|---|---|
| Datasheet | BFQ34 Download |
| Manufacturer |  NXP Semiconductors |
| Description | NPN 4 GHz wideband transistor |
| Buy | Stock & Price |
DESCRIPTION
NPN transistor encapsulated in a 4 lead SOT122A envelope with a ceramic cap. All leads are isolated from the stud. It is primarily intended for driver and final stages in MATV system amplifiers. It is also suitable for use in low power band IV and V equipment. Diffused emitter-ballasting resistors and the application of gold sandwich metallization ensure an optimum temperature profile and excellent reliability properties. PINNING PIN 1 2 3 4DESCRIPTION
Code: BFQ34/01 collector emitter base emitter 2 Top view lfpage BFQ34 4 1 3 MBK187 Fig.1 SOT122A. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot fT Vo PARAMETER collector-base voltage collector-emitter voltage collector current total power dissipation transition frequency output voltage up to Tc = 160 °C IC = 120 mA; VCE = 15 V; RL = 75 Ω; Tamb = 25 °C; dim = −60 dB f(p+q-r) = 793.25 MHz IC = 120 mA; VCE = 15 V; RL = 75 Ω; f = 800 MHz; Tamb = 25 °C IC = 120 mA; VCE = 15 V; RL = 75 Ω; Tamb = 25 °C WARNING Product and environmental safety - toxic materials This product contains beryllium oxide.
