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BFQ34 - NPN 4 GHz wideband transistor

General Description

NPN transistor encapsulated in a 4 lead SOT122A envelope with a ceramic cap.

All leads are isolated from the stud.

It is primarily intended for driver and final stages in MATV system amplifiers.

Key Features

  • high output voltage capabilities.

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DISCRETE SEMICONDUCTORS DATA SHEET BFQ34 NPN 4 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION NPN transistor encapsulated in a 4 lead SOT122A envelope with a ceramic cap. All leads are isolated from the stud. It is primarily intended for driver and final stages in MATV system amplifiers. It is also suitable for use in low power band IV and V equipment. Diffused emitter-ballasting resistors and the application of gold sandwich metallization ensure an optimum temperature profile and excellent reliability properties. The device also features high output voltage capabilities.