BFS505
BFS505 is NPN 9 GHz wideband transistor manufactured by NXP Semiconductors.
DISCRETE SEMICONDUCTORS
DATA SHEET
BFS505 NPN 9 GHz wideband transistor
Product specification File under Discrete Semiconductors, SC14 September 1995
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
Features
- Low current consumption
- High power gain
- Low noise figure
- High transition frequency
- Gold metallization ensures excellent reliability
- SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for low power amplifiers, oscillators and mixers particularly in RF portable munication equipment (cellular phones, cordless phones, pagers) up to 2 GHz. QUICK REFERENCE DATA SYMBOL VCBO VCES IC Ptot h FE f T GUM F Note 1. Ts is the temperature at the soldering point of the collector tab. PARAMETER collector-base voltage collector-emitter voltage DC collector current total power dissipation DC current gain transition frequency maximum unilateral power gain noise figure up to Ts = 147 °C; note 1 IC = 5 m A; VCE = 6 V; Tj = 25 °C IC = 5 m A; VCE = 6 V; f = 1 GHz; Tamb = 25 °C RBE = 0 CONDITIONS open emitter MIN.
- -
- - 60
- TYP.
- -
- - 120 9 17 1.2 1 2 3 PINNING PIN base emitter collector
1 Top view
DESCRIPTION Code: N0 handbook, 2 columns
MBC870
Fig.1 SOT323.
MAX. 20 15 18 150 250
- - 1.7
UNIT V V m A m W GHz d B d B
Ic = 5 m A; VCE = 6 V; f = 900 MHz;
- Tamb = 25 °C Ic = 1.25 m A; VCE = 6 V; f = 900 MHz; Tamb = 25 °C
- September 1995
Philips...
