BFS505 Description
NPN transistor in a plastic SOT323 envelope. It is intended for low power amplifiers, oscillators and mixers particularly in RF portable munication equipment (cellular phones, cordless phones, pagers) up to 2 GHz. QUICK REFERENCE DATA SYMBOL VCBO VCES IC Ptot hFE fT GUM F Note.
BFS505 Key Features
- Low current consumption
- High power gain
- Low noise figure
- High transition frequency
- Gold metallization ensures excellent reliability
- Tamb = 25 °C Ic = 1.25 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C
- September 1995