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BFS505 - NPN 9 GHz wideband transistor

General Description

NPN transistor in a plastic SOT323 envelope.

It is intended for low power amplifiers, oscillators and mixers particularly in RF portable communication equipment (cellular phones, cordless phones, pagers) up to 2 GHz.

QUICK REFERENCE DATA SYMBOL VCBO VCES IC Ptot hFE fT GUM F Note 1.

Key Features

  • Low current consumption.
  • High power gain.
  • Low noise figure.
  • High transition frequency.
  • Gold metallization ensures excellent reliability.
  • SOT323 envelope.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET BFS505 NPN 9 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES • Low current consumption • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for low power amplifiers, oscillators and mixers particularly in RF portable communication equipment (cellular phones, cordless phones, pagers) up to 2 GHz. QUICK REFERENCE DATA SYMBOL VCBO VCES IC Ptot hFE fT GUM F Note 1. Ts is the temperature at the soldering point of the collector tab.