NXP Semiconductors BFS505
NPN 9 GHz wideband transistor
| Part No. | BFS505 |
|---|---|
| Datasheet | BFS505 Download |
| Manufacturer |  NXP Semiconductors |
| Description | NPN 9 GHz wideband transistor |
| Buy | Stock & Price |
FEATURES
● Low current consumption● High power gain
● Low noise figure
● High transition frequency
● Gold metallization ensures excellent reliability
● SOT323 envelope.
DESCRIPTION
NPN transistor in a plastic SOT323 envelope. It is intended for low power amplifiers, oscillators and mixers particularly in RF portable communication equipment (cellular phones, cordless phones, pagers) up to 2 GHz. QUICK REFERENCE DATA SYMBOL VCBO VCES IC Ptot hFE fT GUM F Note 1. Ts is the temperature at the soldering point of the collector tab. PARAMETER collector-base voltage collector-emitter voltage DC collector current total power dissipation DC current gain transition frequency maximum unilateral power gain noise figure up to Ts = 147 °C; note 1 IC = 5 mA; VCE = 6 V; Tj = 25 °C IC = 5 mA; VCE = 6 V; f = 1 GHz; Tamb = 25 °C RBE = 0 CONDITIONS open emitter MIN. − − − − 60 − TYP. − − − − 120 9 17 1.2 1 2 3 PINNING PIN base emitter collector 1 Top view BFS505DESCRIPTION
Code: N0 handbook, 2 columns 3 2 MBC870 Fig.1 SOT323.
