BFS540 Datasheet | NXP Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET BFS540 NPN 9 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 November 1992 Philips Semiconductors Product specification NPN 9 GHz wideband transistor Features - High power gain - Low noise figure - High transition frequency - Gold metallization ensures excellent reliability - SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for RF wideband amplifier applications such as satellite TV systems and RF portable munication equipment with signal frequencies up to 2 GHz. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot h FE f T GUM F PARAMETER collector-base voltage collector-emitter voltage DC collector current total power dissipation DC current gain transition frequency maximum unilateral power gain noise figure up to Ts = 80 °C; note 1 IC = 40 m A; VCE = 8 V; Tj = 25 °C IC = 40 m A; VCE = 8 V; f = 1 GHz; Tamb = 25 °C IC = 40 m A; VCE = 8 V; f = 900 MHz; Tamb = 25 °C IC = 10 m A; VCE = 8 V; f = 900 MHz; Tamb = 25 °C open base CONDITIONS open emitter MIN. - - - - 60 - - - TYP. - - - - 120 9 14 1.3 1 2 3 PINNING PIN base emitter collector 1 Top view DESCRIPTION handbook, 2 columns Code: N4 MBC870 Fig.1 SOT323. MAX. 20 15 120 500 250 - - 1.7 UNIT V V m A m W GHz d B d B LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCES VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector tab. November 1992 2 PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage DC collector current total power dissipation storage temperature junction temperature up to Ts = 80 °C; note 1 RBE = 0 open collector CONDITIONS open emitter MIN. - - - -...