NXP Semiconductors BFS540
NPN 9 GHz wideband transistor
| Part No. | BFS540 |
|---|---|
| Datasheet | BFS540 Download |
| Manufacturer |  NXP Semiconductors |
| Description | NPN 9 GHz wideband transistor |
| Buy | Stock & Price |
FEATURES
● High power gain● Low noise figure
● High transition frequency
● Gold metallization ensures excellent reliability
● SOT323 envelope.
DESCRIPTION
NPN transistor in a plastic SOT323 envelope. It is intended for RF wideband amplifier applications such as satellite TV systems and RF portable communication equipment with signal frequencies up to 2 GHz. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE fT GUM F PARAMETER collector-base voltage collector-emitter voltage DC collector current total power dissipation DC current gain transition frequency maximum unilateral power gain noise figure up to Ts = 80 °C; note 1 IC = 40 mA; VCE = 8 V; Tj = 25 °C IC = 40 mA; VCE = 8 V; f = 1 GHz; Tamb = 25 °C IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 °C IC = 10 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 °C open base CONDITIONS open emitter MIN. − − − − 60 − − − TYP. − − − − 120 9 14 1.3 1 2 3 PINNING PIN base emitter collector 1 Top view BFS540DESCRIPTION
handbook, 2 columns Code: N4 3 2 MBC870 Fig.1 SOT323.
