Datasheet4U Logo Datasheet4U.com

BFS540 - NPN 9 GHz wideband transistor

Datasheet Summary

Description

NPN transistor in a plastic SOT323 envelope.

It is intended for RF wideband amplifier applications such as satellite TV systems and RF portable communication equipment with signal frequencies up to 2 GHz.

Features

  • High power gain.
  • Low noise figure.
  • High transition frequency.
  • Gold metallization ensures excellent reliability.
  • SOT323 envelope.

📥 Download Datasheet

Datasheet preview – BFS540

Datasheet Details

Part number BFS540
Manufacturer NXP
File Size 115.01 KB
Description NPN 9 GHz wideband transistor
Datasheet download datasheet BFS540 Datasheet
Additional preview pages of the BFS540 datasheet.

📁 Similar Datasheet

  • BFS520 - NPN Transistor (INCHANGE)
  • BFS17 - Silicon NPN Planar RF Transistor (Vishay Telefunken)
  • BFS17 - RF TRANSISTOR (Motorola)
  • BFS17 - NPN small signal transistor (ROHM)
  • BFS17 - Silicon NPN Planar RF Transistor (TEMIC)
  • BFS17 - NPN Transistors (Kexin)
  • BFS17-HF - NPN Transistors (Kexin)
  • BFS17A - Silicon NPN Planar RF Transistor (Vishay Telefunken)
  • BFS17AR - Silicon NPN Planar RF Transistor (Vishay Telefunken)
  • BFS17AW - Silicon NPN Planar RF Transistor (Vishay Telefunken)
Other Datasheets by NXP
  • BFS505 - NPN 9 GHz wideband transistor
  • BFS520 - NPN 9 GHz wideband transistor
  • BFS17 - NPN 1GHz wideband transistor
  • BFS17A - NPN 3 GHz wideband transistor
  • BFS17W - NPN 1 GHz wideband transistor
  • BFS19 - NPN medium frequency transistor
  • BFS20 - NPN medium frequency transistor
  • BFS20W - NPN medium frequency transistor

Full PDF Text Transcription

Click to expand full text
DISCRETE SEMICONDUCTORS DATA SHEET BFS540 NPN 9 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 November 1992 Philips Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for RF wideband amplifier applications such as satellite TV systems and RF portable communication equipment with signal frequencies up to 2 GHz.
Published: |