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BFS540 Datasheet NPN 9 Ghz Wideband Transistor

Manufacturer: NXP Semiconductors

Overview: DISCRETE SEMICONDUCTORS DATA SHEET BFS540 NPN 9 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 November 1992 Philips Semiconductors Product specification NPN 9 GHz wideband.

General Description

NPN transistor in a plastic SOT323 envelope.

It is intended for RF wideband amplifier applications such as satellite TV systems and RF portable munication equipment with signal frequencies up to 2 GHz.

QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE fT GUM F PARAMETER collector-base voltage collector-emitter voltage DC collector current total power dissipation DC current gain transition frequency maximum unilateral power gain noise figure up to Ts = 80 °C;

Key Features

  • High power gain.
  • Low noise figure.
  • High transition frequency.
  • Gold metallization ensures excellent reliability.
  • SOT323 envelope.

BFS540 Distributor