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BFS540 - NPN 9 GHz wideband transistor

General Description

NPN transistor in a plastic SOT323 envelope.

It is intended for RF wideband amplifier applications such as satellite TV systems and RF portable communication equipment with signal frequencies up to 2 GHz.

Key Features

  • High power gain.
  • Low noise figure.
  • High transition frequency.
  • Gold metallization ensures excellent reliability.
  • SOT323 envelope.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET BFS540 NPN 9 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 November 1992 Philips Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for RF wideband amplifier applications such as satellite TV systems and RF portable communication equipment with signal frequencies up to 2 GHz.