BFU530W Description
NPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT323 package. The BFU530W is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.
BFU530W Key Features
- Low noise, high breakdown RF transistor
- AEC-Q101 qualified
- Minimum noise figure (NFmin) = 0.6 dB at 900 MHz
- Maximum stable gain 18.5 dB at 900 MHz
- 11 GHz fT silicon technology