NXP Semiconductors BFU530X
The BFU530X is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz. Available design support Download from the BFU530X product information page on Support item Available Remarks Device models for Agilent EEsof EDA ADS yes Based on Mextram device model.| Part No. | BFU530X |
|---|---|
| Datasheet | BFU530X Download |
| Manufacturer |  NXP Semiconductors |
| Description | NPN wideband silicon RF transistor |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● Low noise, high breakdown RF transistor● AEC-Q101 qualified
● Minimum noise figure (NFmin) = 0.7 dB at 900 MHz
● Maximum stable gain 22 dB at 900 MHz
● 11 GHz fT silicon technology 1.3
APPLICATIONS
●APPLICATIONS
requiring high supply voltages and high breakdown voltages● Broadband amplifiers up to 2 GHz
● Low noise amplifiers for ISM applications
● ISM band oscillators 1.4 Quick reference data Table 1. Quick reference data Tamb = 25 C unless otherwise specified Symbol Parameter Conditions VCB collector-base voltage open emitter VCE collector-emitter voltage open base shorted base VEB emitter-base voltage open collector IC collector current Ptot total power dissipation Tsp 87 C hFE DC current gain IC = 10 mA; VCE = 8 V Cc collector capacitance VCB = 8 V; f = 1 MHz fT transition frequency IC = 15 mA; VCE = 8 V; f = 900 MHz Min Typ Max Unit -- 24 V -- 12 V -- 24 V -- 2V - 10 40 mA [1] - - 450 mW 60 95 200 - 0.65 - pF - 11 - GHz NXP Semiconductors BFU530X NPN wideband silicon RF transistor Table 1.
