Download BFU530XR Datasheet PDF
BFU530XR page 2
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BFU530XR Description

NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143R package. The BFU530XR is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.

BFU530XR Key Features

  • Low noise, high breakdown RF transistor
  • AEC-Q101 qualified
  • Minimum noise figure (NFmin) = 0.65 dB at 900 MHz
  • Maximum stable gain 21 dB at 900 MHz
  • 11 GHz fT silicon technology