BLF6G10-45 Datasheet | NXP Semiconductors

description 45 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a mon source class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 920 to 960 VDS (V) 28 PL(AV) (W) 1.0 Gp (d B) 22.5 ηD (%) 7.8 ACPR (d Bc) - 48.5[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 d B at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz CAUTION This device is sensitive to Electro Static Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features I Typical 2-carrier W-CDMA performance at frequencies of 920 MHz and 960 MHz, a supply voltage of 28 V and an IDq of 350 m A: N Average output power = 1.0 W N Gain = 22.5 d B N Efficiency = 7.8 % N ACPR = - 48.5 d Bc I Easy power control I Integrated ESD protection I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation (800 MHz to 1000 MHz) I Internally matched for ease of use I pliant to Directive 2002/95/EC, regarding restriction of hazardous substances (Ro HS) .. NXP Semiconductors Power LDMOS transistor 1.3 Applications I RF power amplifiers for W-CDMA base stations and multi carrier applications in the 800 MHz to 1000 MHz frequency range. 2. Pinning information Table 2. Pin 1 2 3 Pinning Description drain gate source [1] Simplified outline Symbol 3 2 2 3 sym112 [1] Connected to flange 3. Ordering information Table 3. Ordering information Package Name BLF6G10-45 Description flanged ceramic package; 2 mounting holes; 2 leads Version SOT608A Type number 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS ID Tstg Tj Parameter drain-source voltage gate-source voltage drain current storage temperature junction temperature Conditions Min - 0.5 - 65 Max 65 +13 13 +150 225 Unit V V A °C °C 5. Thermal characteristics Table...