BLF6G20-180P - UHF power LDMOS transistor

Product Overview

NXP

BLF6G20-180P UHF power LDMOS transistor by NXP - Datasheet Preview — Datasheet preview – BLF6G20-180P

Datasheet Details

Part number	BLF6G20-180P
Manufacturer	NXP
File Size	84.33 KB
Description	UHF power LDMOS transistor
Datasheet	BLF6G20-180P Datasheet
Additional preview pages of the BLF6G20-180P datasheet.

Product details

Description

180 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. 35[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz CAUTION This device i

Features

I Typical 2-carrier W-CDMA performance at frequencies of 1805 MHz and 1880 MHz, a supply voltage of 32 V and an IDq of 1600 mA: N Average output power = 50 W N Power gain = 17.5 dB (typ) N Efﬁciency = 27.5 % N ACPR =.
35 dBc I Easy power control I Integrated ESD protection I Excellent ruggedness I High efﬁciency I Excellent thermal stability I Designed for broadband operation (1800 MHz to 2000 MHz) I Internally matched for ease of use 1.3.

📁 Similar Datasheet

BLF6G20-180PN - Power LDMOS transistor (NXP Semiconductors)
BLF6G20-110 - Power LDMOS transistor (NXP Semiconductors)
BLF6G20-230PRN - Power LDMOS transistor (NXP Semiconductors)
BLF6G20-45 - Power LDMOS transistor (Ampleon)
BLF6G20LS-110 - Power LDMOS transistor (NXP Semiconductors)
BLF6G20LS-140 - Power LDMOS transistor (NXP Semiconductors)
BLF6G20S-45 - Power LDMOS transistor (Ampleon)
BLF6G21-10G - Power LDMOS transistor (Ampleon)

Other Datasheets by NXP

BLF6G20-180RN - Power LDMOS Transistor
BLF6G20LS-180RN - Power LDMOS Transistor
BLF6G22-180RN - Power LDMOS Transistor
BLF6G22LS-180RN - Power LDMOS Transistor
BLF6G10-45 - Power LDMOS Transistor
BLF6G10S-45 - Power LDMOS Transistor

Published: Jan 31, 2007 |