BLF6G20-180RN
BLF6G20-180RN is Power LDMOS transistor manufactured by Ampleon.
BLF6G20-180RN; BLF6G20LS-180RN
Power LDMOS transistor
Rev. 2
- 1 September 2015
Product data sheet
1. Product profile
1.1 General description
180 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.
Table 1. Typical performance
Typical RF performance at Tcase = 25 C in a class-AB production test circuit.
Mode of operation f
VDS PL(AV) Gp D IMD3
(MHz)
(V) (W) (dB) (%) (dBc)
2-carrier WCDMA
1930 to 1990 30 40
17.2 27
- 38[1]
ACPR (dBc)
- 41[1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier spacing 10 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD)....
