Datasheet Details
| Part number | BLF6G20-180RN |
|---|---|
| Manufacturer | Ampleon |
| File Size | 1.09 MB |
| Description | Power LDMOS transistor |
| Datasheet |
 BLF6G20-180RN Datasheet
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General Description
180 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.
Table 1.
Typical RF performance at Tcase = 25 C in a class-AB production test circuit.
Key Features
- Typical 2-carrier WCDMA performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 30 V and an IDq of 1400 mA:.
- Average output power = 40 W.
- Power gain = 17.2 dB.
- Efficiency = 27 %.
- IMD3 = 41 dBc.
- ACPR = 38 dBc.
- Easy power control.
- Integrated ESD protection.
- Enhanced ruggedness.
- High efficiency.
- Excellent thermal stability.
- Designed for broadband operation (1800 MHz to 2000 MHz).
- Internally matched for ease of use.