BLF6G20-180RN datasheet by NXP Semiconductors.
| Part number | BLF6G20-180RN |
|---|---|
| Datasheet | BLF6G20-180RN_PhilipsSemiconductors.pdf |
| File Size | 141.98 KB |
| Manufacturer | NXP Semiconductors |
| Description | Power LDMOS Transistor |
|
|
180 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. PAR = 7 dB at 0.01 % probability on CCDF per carrier;.
View BLF6G20-180RN datasheet index
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
BLF6G20-180RN | Power LDMOS transistor | Ampleon |
 |
BLF6G20-180PN | Power LDMOS transistor | NXP Semiconductors |
View all NXP Semiconductors datasheets
| Part Number | Description |
|---|---|
| BLF6G20-180P | UHF power LDMOS transistor |
| BLF6G20-45 | UHF power LDMOS transistor |
| BLF6G20LS-180RN | Power LDMOS Transistor |
| BLF6G21-10G | Power LDMOS Transistor |
| BLF6G22-180RN | Power LDMOS Transistor |
| BLF6G22LS-180RN | Power LDMOS Transistor |
| BLF6G10-45 | Power LDMOS Transistor |
| BLF6G10S-45 | Power LDMOS Transistor |
| BLF640 | Broadband power LDMOS transistor |
| BLF642 | Broadband power LDMOS transistor |
