BLF6G20-180RN
BLF6G20-180RN is Power LDMOS Transistor manufactured by NXP Semiconductors.
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BLF6G20-180RN; BLF6G20LS-180RN
Power LDMOS transistor
Rev. 01
- 17 November 2008 Product data sheet
1. Product profile
1.1 General description
180 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 2-carrier WCDMA
[1] f (MHz) 1930 to 1990
VDS (V) 30
PL(AV) (W) 40
Gp (dB) 17.2
ηD (%) 27
IMD3 (dBc)
- 38[1]
ACPR (dBc)
- 41[1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier spacing 10 MHz.
CAUTION This device is sensitive to ElectroStatic...
