BLF6G20-180RN Datasheet

The BLF6G20-180RN is a Power LDMOS transistor.

Datasheet4U Logo
Part NumberBLF6G20-180RN
ManufacturerAmpleon
Overview 180 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a class-AB production tes.
* Typical 2-carrier WCDMA performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 30 V and an IDq of 1400 mA:
* Average output power = 40 W
* Power gain = 17.2 dB
* Efficiency = 27 %
* IMD3 = 41 dBc
* ACPR = 38 dBc
* Easy power control
* Integrated ESD protection
* Enhanced rugged.
Part NumberBLF6G20-180RN
DescriptionPower LDMOS Transistor
ManufacturerNXP Semiconductors
Overview 180 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test . I Typical 2-carrier WCDMA performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 30 V and an IDq of 1400 mA: N Average output power = 40 W N Power gain = 17.2 dB N Efficiency = 27 % N IMD3 =
*41 dBc N ACPR =
*38 dBc I Easy power control I Integrated ESD protection I Enhanced ruggedn.