BLF6G20-180PN
BLF6G20-180PN is Power LDMOS transistor manufactured by NXP Semiconductors.
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Power LDMOS transistor
Rev. 03
- 30 March 2009 Product data sheet
1. Product profile
1.1 General description
180 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.
Table 1. Typical performance RF performance at Tcase = 25 °C in a mon source class-AB production test circuit. Mode of operation 2-carrier W-CDMA
[1] f (MHz) 1805 to 1880
VDS (V) 32
PL(AV) (W) 50
Gp (dB) 18
ηD (%) 29.5
ACPR (dBc)
- 35[1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz.
CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care...
