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BLW90 - UHF power transistor

Datasheet Summary

Description

N-P-N silicon planar epitaxial transistor suitable for transmitting applications in class-A, B or C in the u.h.f.

and v.h.f.

range for a nominal supply voltage of 28 V.

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Datasheet Details

Part number BLW90
Manufacturer NXP
File Size 58.73 KB
Description UHF power transistor
Datasheet download datasheet BLW90 Datasheet
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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET BLW90 UHF power transistor Product specification August 1986 Philips Semiconductors Product specification UHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor suitable for transmitting applications in class-A, B or C in the u.h.f. and v.h.f. range for a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaranteed to withstand infinite VSWR at rated output power. High reliability is ensured by a gold sandwich metallization. The transistor is housed in a 1⁄4" capstan envelope with a ceramic cap. All leads are isolated from the stud. BLW90 QUICK REFERENCE DATA R.F. performance up to Th = 25 °C in an unneutralized common-emitter class-B circuit MODE OF OPERATION c.w.
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