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BLW96 - HF/VHF power transistor

General Description

N-P-N silicon planar epitaxial transistor intended for use in class-A, AB and B operated high power industrial and military transmitting equipment in the h.f.

and v.h.f.

band.

Key Features

  • acitors (500 V) in parallel C.

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Other Datasheets by NXP Semiconductors

Part Number Description
BLW90 UHF power transistor
BLW90 UHF power transistor
BLW95 HF Power Transistor
BLW97 HF power transistor
BLW98 UHF linear power transistor
BLW29 VHF power transistor
BLW30 VHF power transistor
BLW32 UHF linear power transistor
BLW33 UHF linear power transistor
BLW34 UHF linear power transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET BLW96 HF/VHF power transistor Product specification August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, AB and B operated high power industrial and military transmitting equipment in the h.f. and v.h.f. band. The transistor presents excellent performance as a linear amplifier in s.s.b. applications. It is resistance stabilized and is guaranteed to withstand severe load mismatch conditions. Transistors are supplied in matched hFE groups. The transistor has a 1⁄2" flange envelope with a ceramic cap. All leads are isolated from the flange. BLW96 QUICK REFERENCE DATA R.F. performance up to Th = 25 °C MODE OF OPERATION s.s.b. (class-AB) c.w.