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BLW96 - HF/VHF power transistor

Datasheet Summary

Description

N-P-N silicon planar epitaxial transistor intended for use in class-A, AB and B operated high power industrial and military transmitting equipment in the h.f.

and v.h.f.

band.

Features

  • acitors (500 V) in parallel C.

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Datasheet preview – BLW96

Datasheet Details

Part number BLW96
Manufacturer NXP
File Size 89.60 KB
Description HF/VHF power transistor
Datasheet download datasheet BLW96 Datasheet
Additional preview pages of the BLW96 datasheet.

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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET BLW96 HF/VHF power transistor Product specification August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, AB and B operated high power industrial and military transmitting equipment in the h.f. and v.h.f. band. The transistor presents excellent performance as a linear amplifier in s.s.b. applications. It is resistance stabilized and is guaranteed to withstand severe load mismatch conditions. Transistors are supplied in matched hFE groups. The transistor has a 1⁄2" flange envelope with a ceramic cap. All leads are isolated from the flange. BLW96 QUICK REFERENCE DATA R.F. performance up to Th = 25 °C MODE OF OPERATION s.s.b. (class-AB) c.w.
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