BLW97 - HF power transistor

Datasheet Summary

Description

N-P-N silicon planar epitaxial transistor designed for use in class-A, AB and B operated high-power industrial and military transmitting equipment in the h.f.

band.

The transistor offers excellent performance as a linear amplifier in s.s.b.

NXP

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Datasheet Details

Part number	BLW97
Manufacturer	NXP
File Size	73.81 KB
Description	HF power transistor
Datasheet	BLW97 Datasheet
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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET BLW97 HF power transistor Product speciﬁcation August 1986 Philips Semiconductors Product speciﬁcation HF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor designed for use in class-A, AB and B operated high-power industrial and military transmitting equipment in the h.f. band. The transistor offers excellent performance as a linear amplifier in s.s.b. applications. It is resistance stabilized and is made to withstand severe load-mismatch conditions. All leads are isolated from the flange. The transistors are supplied in matched hFE groups. BLW97 QUICK REFERENCE DATA R.F. performance up to Th = 25 °C MODE OF OPERATION s.s.b.

Published: Mar 23, 2005 |