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BLW97 - HF power transistor

General Description

N-P-N silicon planar epitaxial transistor designed for use in class-A, AB and B operated high-power industrial and military transmitting equipment in the h.f.

band.

The transistor offers excellent performance as a linear amplifier in s.s.b.

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Other Datasheets by NXP Semiconductors

Part Number Description
BLW90 UHF power transistor
BLW90 UHF power transistor
BLW95 HF Power Transistor
BLW96 HF/VHF power transistor
BLW98 UHF linear power transistor
BLW29 VHF power transistor
BLW30 VHF power transistor
BLW32 UHF linear power transistor
BLW33 UHF linear power transistor
BLW34 UHF linear power transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET BLW97 HF power transistor Product specification August 1986 Philips Semiconductors Product specification HF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor designed for use in class-A, AB and B operated high-power industrial and military transmitting equipment in the h.f. band. The transistor offers excellent performance as a linear amplifier in s.s.b. applications. It is resistance stabilized and is made to withstand severe load-mismatch conditions. All leads are isolated from the flange. The transistors are supplied in matched hFE groups. BLW97 QUICK REFERENCE DATA R.F. performance up to Th = 25 °C MODE OF OPERATION s.s.b.