BSH299 Description
drain drain gate source drain drain 6 5 4 d DESCRIPTION P-channel enhancement mode MOS transistor in a SOT363 SMD package. 1 2 3 MAM396 g s CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling.
BSH299 Key Features
- Low threshold voltage
- High-speed switching
- No secondary breakdown
- Direct interface to C-MOS, TTL, etc