BSH299 datasheet by NXP Semiconductors.
| Part number | BSH299 |
|---|---|
| Datasheet | BSH299_PhilipsSemiconductors.pdf |
| File Size | 93.64 KB |
| Manufacturer | NXP Semiconductors |
| Description | P-channel enhancement mode MOS transistor |
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drain drain gate source drain drain 6 5 4 d DESCRIPTION P-channel enhancement mode MOS transistor in a SOT363 SMD package. 1 2 3 MAM396 g s CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling.
View all NXP Semiconductors datasheets
| Part Number | Description |
|---|---|
| BSH201 | P-channel enhancement mode MOS transistor |
| BSH202 | P-channel enhancement mode MOS transistor |
| BSH203 | P-channel enhancement mode MOS transistor |
| BSH205 | P-channel enhancement mode MOS transistor |
| BSH206 | P-channel enhancement mode MOS transistor |
| BSH207 | P-channel enhancement mode MOS transistor |
| BSH101 | N-channel enhancement mode MOS transistor |
| BSH102 | N-channel enhancement mode MOS transistor |
| BSH103 | N-channel enhancement mode MOS transistor |
| BSH104 | N-channel enhancement mode MOS transistor |
