Datasheet Details
| Part number | BSH299 |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 93.64 KB |
| Description | P-channel enhancement mode MOS transistor |
| Datasheet | BSH299_PhilipsSemiconductors.pdf |
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Overview: DISCRETE SEMICONDUCTORS DATA SHEET BSH299 P-channel enhancement mode MOS transistor Objective specification File under Discrete Semiconductors, SC13b 1998 Feb 18 Philips Semiconductors Objective specification P-channel.
| Part number | BSH299 |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 93.64 KB |
| Description | P-channel enhancement mode MOS transistor |
| Datasheet | BSH299_PhilipsSemiconductors.pdf |
|
|
|
drain drain gate source drain drain 6 5 4 d DESCRIPTION P-channel enhancement mode MOS transistor in a SOT363 SMD package.
1 2 3 MAM396 g s CAUTION The device is supplied in an antistatic package.
The gate-source input must be protected against static discharge during transport or handling.
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