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BSP225 Description

P-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope, intended for use in relay, high-speed and line transformer drivers. 250 225 15 2.8 UNIT V mA Ω V handbook, halfpage 4 d DESCRIPTION g s Fig.1 Simplified outline and symbol. April 1995 2 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor LIMITING VALUES In accordance with the System (IEC...

BSP225 Key Features

  • Low RDS(on)
  • Direct interface to C-MOS, TTL, etc
  • High-speed switching
  • No secondary breakdown. DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope,
  • SOT223 PIN 1 2 3 4 gate drain source drain