BST120 Description
P-channel vertical D-MOS transistor in SOT89 envelope and intended for use in relay, high-speed and line-transformer drivers, using SMD technology.
BST120 Key Features
- Very low RDS(on)
- Direct interface to C-MOS
- High-speed switching
- No second breakdown QUICK REFERENCE DATA Drain-source voltage Gate-source voltage (open drain) Drain current (DC) Total
- SOT89 1 = source 2 = drain 3 = gate Yfs typ. RDS(on) -VDS ±VGSO -ID Ptot