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BST120 - P-channel transistor

General Description

P-channel vertical D-MOS transistor in SOT89 envelope and intended for use in relay, high-speed and line-transformer drivers, using SMD technology.

Key Features

  • Very low RDS(on).
  • Direct interface to C-MOS.
  • High-speed switching.
  • No second breakdown QUICK.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET BST120 P-channel enhancement mode vertical D-MOS transistor Product speciļ¬cation File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product speciļ¬cation P-channel enhancement mode vertical D-MOS transistor DESCRIPTION P-channel vertical D-MOS transistor in SOT89 envelope and intended for use in relay, high-speed and line-transformer drivers, using SMD technology.