BST70
DESCRIPTION
N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended for use in relay, high-speed and line-transformer drivers. FEATURES
:
- Very low RDS(on)
- Direct interface to C-MOS, TTL, etc.
- High-speed switching
- No second breakdown PINNING
- TO-92 VARIANT 1 = source 2 = gate 3 = drain QUICK REFERENCE DATA Drain-source voltage Gate-source voltage (open drain) Drain current (DC) Total power dissipation up to Tamb = 25 °C Drain-source ON-resistance ID = 500 m A; VGS = 10 V Transfer admittance ID = 500 m A; VDS = 15 V Yfs typ. RDS(on) VDS VGSO ID Ptot
BST70A max. max. max. max. typ. max.
80 V 20 V 0.5 A 1 W 2 Ω 4 Ω
300 m S
PIN CONFIGURATION handbook, halfpage d
1 2 3 g
MAM146 s
Note: Various pinout configurations available.
Fig.1 Simplified outline and symbol.
April 1995
Philips Semiconductors
Product specification
N-channel vertical D-MOS transistor
RATINGS Limiting values in accordance with the Absolute Maximum System (IEC...
