BST76
FEATURES
- Direct interface to C-MOS, TTL, etc.
- High-speed switching
- No secondary breakdown. APPLICATIONS
- Line current interrupter in telephone sets
- Relay, high-speed and line transformer drivers. DESCRIPTION
N-channel enhancement mode vertical D-MOS transistor in a SOT54 (TO-92) variant package. handbook, halfpage
BST76A
PINNING
- SOT54 (TO-92) variant PIN 1 2 3 SYMBOL s g d DESCRIPTION source gate drain d
2 3 g
MAM146 s
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA SYMBOL VDS VDS(SM) VGSO ID Ptot RDSon yfs PARAMETER drain-source voltage (DC) drain-source voltage gate-source voltage (DC) drain current (DC) total power dissipation drain-source on-state resistance forward transfer admittance Tamb ≤ 25 °C ID = 15 m A; VGS = 3 V ID = 300 m A; VDS = 15 V non-repetitive peak; tp ≤ 2 m S open drain CONDITIONS
- -
- -
- 7 250 TYP. MAX. 180 200 ±20 300 1 10
- V V V m A W Ω m S UNIT
1997 Jun 20
Philips Semiconductors
Product specification
N-channel enhancement...
