BUK110-50GS Datasheet | NXP Semiconductors

DESCRIPTION Monolithic temperature and overload protected power MOSFET in a 3 pin plastic surface mount envelope, intended as a general purpose switch for automotive systems and other applications. QUICK REFERENCE DATA SYMBOL VDS ID PD Tj RDS(ON) PARAMETER Continuous drain source voltage Continuous drain current Total power dissipation Continuous junction temperature Drain-source on-state resistance VIS = 10 V MAX. 50 50 125 150 28 UNIT V A W ˚C mΩ APPLICATIONS General controller for driving lamps motors solenoids heaters FEATURES Vertical power DMOS output stage Low on-state resistance Overload protection against over temperature Overload protection against short circuit load Latched overload protection reset by input 10 V input level Low threshold voltage also allows 5 V control Control of power MOSFET and supply of overload protection circuits derived from input ESD protection on input pin Overvoltage clamping for turn off of inductive loads FUNCTIONAL BLOCK DIAGRAM DRAIN O/V CLAMP INPUT POWER MOSFET LOGIC AND PROTECTION SOURCE Fig.1. Elements of the TOPFET. PINNING - SOT404 PIN 1 2 3 mb input drain source drain DESCRIPTION PIN CONFIGURATION mb SYMBOL D TOPFET I 2 1 3 June 1996 Rev 1.000 Philips Semiconductors Product specification Power MOS transistor TOPFET LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VDSS VIS ID ID IDRM PD Tstg Tj Tsold PARAMETER Continuous off-state drain source voltage1 Continuous input voltage Continuous drain current Continuous drain current Repetitive peak on-state drain current Total power dissipation Storage temperature Continuous junction temperature2 Lead temperature CONDITIONS VIS = 0 V Tmb ≤ 25 ˚C; VIS = 10 V Tmb ≤ 100 ˚C; VIS = 10 V Tmb ≤ 25 ˚C; VIS = 10 V Tmb ≤ 25 ˚C normal operation during soldering MIN. 0 -55 - BUK110-50GS MAX. 50 11 50 31 200 125 150 150 250 UNIT V V A A A W ˚C ˚C ˚C OVERLOAD PROTECTION LIMITING VALUES With...