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BUK113-50DL - Power MOSFET

General Description

Monolithic overload protected logic level power MOSFET in a surface mount plastic envelope, intended as a general purpose switch for automotive systems and other applications.

Key Features

  • Vertical power DMOS output stage Overload protected up to 125˚C ambient Overload protection by current limiting and overtemperature sensing Latched overload protection reset by input 5 V logic compatible input level Control of power MOSFET and supply of overload protection circuits derived from input Low operating input current permits direct drive by micro-controller ESD protection on all pins Overvoltage clamping for turn off of inductive loads.

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Philips Semiconductors Objective specification PowerMOS transistor Logic level TOPFET DESCRIPTION Monolithic overload protected logic level power MOSFET in a surface mount plastic envelope, intended as a general purpose switch for automotive systems and other applications. BUK113-50DL QUICK REFERENCE DATA SYMBOL VDS ID PD Tj RDS(ON) PARAMETER Continuous drain source voltage Drain current limiting Total power dissipation Continuous junction temperature Drain-source on-state resistance MIN. 4 MAX.