BUK113-50DL Datasheet | NXP Semiconductors

DESCRIPTION Monolithic overload protected logic level power MOSFET in a surface mount plastic envelope, intended as a general purpose switch for automotive systems and other applications. QUICK REFERENCE DATA SYMBOL VDS ID PD Tj RDS(ON) PARAMETER Continuous drain source voltage Drain current limiting Total power dissipation Continuous junction temperature Drain-source on-state resistance MIN. 4 MAX. UNIT 50 8 4 150 200 V A W ˚C mΩ APPLICATIONS General controller for driving lamps small motors solenoids FEATURES Vertical power DMOS output stage Overload protected up to 125˚C ambient Overload protection by current limiting and overtemperature sensing Latched overload protection reset by input 5 V logic patible input level Control of power MOSFET and supply of overload protection circuits derived from input Low operating input current permits direct drive by micro-controller ESD protection on all pins Overvoltage clamping for turn off of inductive loads FUNCTIONAL BLOCK DIAGRAM DRAIN O/V CLAMP INPUT POWER MOSFET LOGIC AND PROTECTION SOURCE Fig.1. Elements of the TOPFET. PINNING - SOT223 PIN 1 2 3 4 input drain source drain (tab) DESCRIPTION PIN CONFIGURATION SYMBOL D TOPFET I January 1996 Rev 1.000 Philips Semiconductors Objective specification Power MOS transistor Logic level TOPFET LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS ID II IIRM PD Tstg Tj PARAMETER Continuous drain source voltage Continuous drain current2 Continuous input current Non-repetitive peak input current Total power dissipation Storage temperature Continuous junction temperature CONDITIONS clamping tp ≤ 1 ms Tsp = 90 ˚C normal operation MIN. -55 - MAX. 50 self limiting 3 10 4 150 150 UNIT V A m A m A W ˚C ˚C ESD LIMITING VALUE SYMBOL VC PARAMETER Electrostatic discharge capacitor voltage CONDITIONS Human body model; C = 250 p F; R = 1.5 kΩ MIN. MAX. 2 UNIT k V OVERVOLTAGE...