BUK663R5-30C Datasheet | NXP Semiconductors

description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced Trench MOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits - AEC Q101 pliant - Suitable for intermediate level gate drive sources - Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications - 12 V Automotive systems - Electric and electro-hydraulic power steering - Motors, lamps and solenoid control - Start-Stop micro-hybrid applications - Transmission control - Ultra high performance power switching 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1 Tmb = 25 °C; see Figure 2 [1] Min - Typ - Max Unit 30 100 158 V A W Static characteristics RDSon VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 12; see Figure 13 2.9 3.5 mΩ Avalanche ruggedness EDS(AL)S non-repetitive ID = 100 A; Vsup ≤ 30 V; drain-source RGS = 50 Ω; VGS = 10 V; avalanche energy Tj(init) = 25 °C; unclamped 242 m J [1] Continuous current is limited by package. .. NXP Semiconductors N-channel Trench MOS intermediate level FET 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol Description G D S D gate Drain source mounting base; connected to drain 2 1 3 mb Simplified outline Graphic symbol G mbb076 SOT404 (D2PAK) 3. Ordering information Table 3. Ordering information Package Name BUK663R5-30C D2PAK Description Version plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404 (one lead cropped) Type number All information provided in this document is subject to legal...