BUK7213-40A Datasheet | NXP Semiconductors

Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips General-Purpose Automotive Trench MOS™ technology. 1.2 Features s Very low on-state resistance s 175 °C rated s Q101 pliant s Standard level patible 1.3 Applications s Automotive systems s Motors, lamps and solenoids s 12 V loads s General purpose power switching 1.4 Quick reference data s VDS ≤ 40 V s ID ≤ 78 A s RDSon = 10.3 mΩ (typ) s Ptot ≤ 150 W. 2. Pinning information Table 1: Pin 1 2 3 mb Pinning - SOT428 (D-PAK), simplified outline and symbol Description gate (g) mb d Simplified outline Symbol drain (d) source (s) drain (d) 2 1 Top view 3 MBK091 g s MBB076 SOT428 (D-PAK) Philips Semiconductors Trench MOS™ standard level FET 3. Ordering information Table 2: Ordering information Package Name BUK7213-40A D-PAK Description Plastic single-ended surface mounted package (Philips version of D-PAK); 3 leads (one lead cropped) Version SOT428 Type number 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tmb = 25 °C; VGS = 10 V; Figure 2 and 3 Tmb = 100 °C; VGS = 10 V; Figure 2 IDM Ptot Tstg Tj IDR IDRM peak drain current total power dissipation storage temperature junction temperature reverse drain current (DC) peak reverse drain current Tmb = 25 °C Tmb = 25 °C; pulsed; tp ≤ 10 µs unclamped inductive load; ID = 75 A; VDS ≤ 40 V; VGS = 10 V; RGS = 50 Ω; starting Tmb = 25 °C human body model; C = 100 p F; R = 1.5 kΩ [1] [2] [1] [2] [1] Conditions RGS = 20 kΩ Min - 55 - 55 - Max 40 40 ±20 78 55 55 312 150 +175 +175 78 55 312 244 Unit V V V A A A A W °C °C A A A m J Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 Tmb = 25 °C; Figure 1 Source-drain diode Avalanche ruggedness EDS(AL)S non-repetitive avalanche energy Electrostatic discharge Vesd electrostatic discharge...