BUK7215-55A Datasheet | NXP Semiconductors

description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits - AEC Q101 pliant - Low conduction losses due to low on-state resistance - Suitable for standard level gate drive sources - Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications - 12 V and 24 V loads - Automotive and general purpose power switching - Motors, lamps and solenoids 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C ID drain current VGS = 10 V; Tmb = 25 °C; see Figure 3; see Figure 1 Ptot total power dissipation Tmb = 25 °C; see Figure 2 Static characteristics RDSon drain-source on-state VGS = 10 V; ID = 25 A; resistance Tj = 25 °C; see Figure 11; see Figure 12 Min Typ Max Unit - - 55 V [1] - - 62 A - - 115 W - 13 15 mΩ NXP Semiconductors N-channel Trench MOS standard level FET Table 1. Quick reference data …continued Symbol Parameter Conditions Avalanche Ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Dynamic characteristics ID = 62 A; Vsup ≤ 55 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped QGD gate-drain charge VGS = 10 V; ID = 25 A; VDS = 44 V; Tj = 25 °C; see Figure 13 [1] Current is limited by power dissipation chip...