BUK7227-100B Datasheet | NXP Semiconductors

Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) Trench MOS™ technology. 1.2 Features s Very low on-state resistance s 185 °C rated s Q101 pliant s Standard level patible. 1.3 Applications s Automotive systems s Motors, lamps and solenoids s 12 V, 24 V and 42 V loads s General purpose power switching. 1.4 Quick reference data s EDS(AL)S ≤ 145 m J s ID ≤ 48 A s RDSon = 23 mΩ (typ) s Ptot ≤ 167 W. 2. Pinning information Table 1: Pin 1 2 3 mb Pinning - SOT428 (D-PAK), simplified outline and symbol Simplified outline [1] Description gate (g) drain (d) source (s) mounting base; connected to drain (d) Symbol d mb g s MBB076 2 1 Top view 3 MBK091 SOT428 (D-PAK) [1] It is not possible to make connection to pin 2 of the SOT428 package. Philips Semiconductors Trench MOS™ standard level FET 3. Ordering information Table 2: Ordering information Package Name BUK7227-100B D-PAK Description Plastic single-ended surface mounted package (Philips version of D-PAK); 3 leads (one lead cropped). Version SOT428 Type number 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VDGR VGS ID Parameter drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tmb = 25 °C; VGS = 10 V; Figure 2 and 3 Tmb = 100 °C; VGS = 10 V; Figure 2 IDM Ptot Tstg Tj IDR IDRM EDS(AL)S peak drain current total power dissipation storage temperature junction temperature reverse drain current (DC) peak reverse drain current non-repetitive drain-source avalanche energy Tmb = 25 °C Tmb = 25 °C; pulsed; tp ≤ 10 µs unclamped inductive load; ID = 48 A; VDS ≤ 100 V; VGS = 10 V; RGS = 50 Ω; starting Tj = 25 °C Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 Tmb = 25 °C; Figure 1 RGS = 20 kΩ Conditions Min - 55 - 55 Max 100 100 ±20 48 34 196 167 +185 +185 48 196 145 Unit V V V A A A W °C °C A A m J Source-drain...