BUK856-400IZ datasheet by NXP Semiconductors.
| Part number | BUK856-400IZ |
|---|---|
| Datasheet | BUK856-400IZ_PhilipsSemiconductors.pdf |
| File Size | 81.43 KB |
| Manufacturer | NXP Semiconductors |
| Description | Insulated Gate Bipolar Transistor Protected Logic-Level IGBT |
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Protected N-channel logic-level insulated gate bipolar power transistor in a plastic envelope, intended for automotive ignition applications. The device has built-in zener diodes providing active collector voltage clamping and ESD protection up to 2 kV. BUK856-400 IZ QUICK REFERENCE DATA SYMBOL PARAMETER V(CL)CER VCEsat IC Ptot ECERS Collector-emitter clamp voltage Collector-emitter on-state voltage Collector...
View all NXP Semiconductors datasheets
| Part Number | Description |
|---|---|
| BUK856-800A | Insulated Gate Bipolar Transistor IGBT |
| BUK854-800A | Insulated Gate Bipolar Transistor IGBT |
| BUK866-400IZ | Insulated Gate Bipolar Transistor Protected Logic-Level IGBT |
| BUK100-50DL | PowerMOS transistor Logic level TOPFET |
| BUK100-50GL | PowerMOS transistor Logic level TOPFET |
| BUK100-50GS | PowerMOS transistor TOPFET |
| BUK101-50DL | PowerMOS transistor Logic level TOPFET |
| BUK101-50GL | PowerMOS transistor Logic level TOPFET |
| BUK101-50GS | PowerMOS transistor TOPFET |
| BUK102-50DL | PowerMOS transistor Logic level TOPFET |
