BUK856-800A Datasheet | NXP Semiconductors

DESCRIPTION Fast-switching N-channel insulated gate bipolar power transistor in a plastic envelope. The device is intended for use in motor control, DC/DC and AC/DC converters, and in general purpose high frequency switching applications. QUICK REFERENCE DATA SYMBOL VCE IC Ptot VCEsat Eoff PARAMETER Collector-emitter voltage Collector current (DC) Total power dissipation Collector-emitter on-state voltage Turn-off energy Loss MAX. 800 24 125 3.5 1.0 UNIT V A W V m J PINNING - TO220AB PIN 1 2 3 tab gate collector emitter collector DESCRIPTION PIN CONFIGURATION tab SYMBOL c g 1 23 e LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VCE VCGR ±VGE IC IC ICLM ICM Ptot Tstg Tj PARAMETER Collector-emitter voltage Collector-gate voltage Gate-emitter voltage Collector current (DC) Collector current (DC) Collector Current (Clamped Inductive Load) Collector current (pulsed peak value, on-state) Total power dissipation Storage temperature Junction Temperature CONDITIONS RGE = 20 kΩ Tmb = 25 ˚C Tmb = 100 ˚C Tj ≤ Tjmax. VCL ≤ 500 V Tj ≤ Tjmax. Tmb = 25 ˚C MIN. -5 - 55 MAX. 800 800 30 24 12 40 50 125 150 150 UNIT V V V A A A A W ˚C ˚C THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Junction to mounting base Junction to ambient CONDITIONS In free air TYP. 60 MAX. 1.0 UNIT K/W K/W March 1993 Rev 1.000 Philips Semiconductors Product Specification Insulated Gate Bipolar Transistor (IGBT) STATIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL V(BR)CES VGE(TO) ICES ICES IECS IGES VCEsat PARAMETER Collector-emitter breakdown voltage Gate threshold voltage Zero gate voltage collector current Zero gate voltage collector current Reverse collector current Gate emitter leakage current Collector-emitter saturation voltage CONDITIONS VGE = 0 V; IC = 0.25 m A VCE = VGE; IC = 1 m A VCE = 800 V; VGE = 0 V; Tj = 25 ˚C VCE = 800 V; VGE = 0 V; Tj =125 ˚C VCE = -5 V; VGE = 0 V VGE = ±30 V; VCE = 0 V VGE = 15...