BUK866-400IZ Datasheet | NXP Semiconductors

DESCRIPTION Protected N-channel logic-level insulated gate bipolar power transistor in a plastic envelope suitable for surface mount applications. It is intended for automotive ignition applications, and has integral zener diodes providing active collector voltage clamping and ESD protection up to 2 k V. BUK866-400 IZ QUICK REFERENCE DATA SYMBOL PARAMETER V(CL)CER VCEsat IC Ptot ECERS Collector-emitter clamp voltage Collector-emitter on-state voltage Collector current (DC) Total power dissipation Clamped energy dissipation MIN. TYP. MAX. UNIT 350 400 500 2.2 20 100 300 V V A W m J PINNING - SOT404 PIN 1 2 3 tab gate collector emitter collector DESCRIPTION PIN CONFIGURATION mb SYMBOL c g 2 1 3 e LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VCE VCE ±VGE IC IC ICM ICLM ECERS ECERR EECR Ptot Tstg Tj PARAMETER Collecter-emitter voltage Collector-emitter voltage Gate-emitter voltage Collector current (DC) Collector current (DC) Collector current (pulsed peak value, on-state) Collector current (clamped inductive load) Clamped turn-off energy (non-repetitive) Clamped turn-off energy (repetitive) Reverse avalanche energy (repetitive) Total power dissipation Storage temperature Operating Junction Temperature CONDITIONS tp ≤ 500 µs Continuous Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C; tp ≤ 10 ms; VCE ≤ 15 V 1 kΩ ≤ RG ≤ 10 kΩ Tmb = 25 ˚C; IC = 10 A; RG = 1 kΩ; see Figs. 23,24 Tmb = 125 ˚C; IC = 8 A; RG = 1 kΩ; f = 50 Hz; t = 60 min. IE = 1 A; f = 50 Hz Tmb = 25 ˚C MIN. -20 -55 -40 MAX. 500 50 12 10 20 25 10 300 125 5 125 150 150 UNIT V V V A A A A m J m J m J W ˚C ˚C ESD LIMITING VALUE SYMBOL VC PARAMETER Electrostatic discharge capacitor voltage CONDITIONS Human body model (100 p F, 1.5 kΩ) MIN. MAX. 2 UNIT k V December 1996 Rev. 1.100 Philips Semiconductors Product specification Insulated Gate Bipolar Transistor Protected Logic-Level IGBT THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction...