BUK9107-55ATE Overview
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for ElectroStatic Discharge (ESD) protection and temperature sensing. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
BUK9107-55ATE Key Features
- Allows responsive temperature monitoring due to integrated temperature sensor
- Q101 pliant
- Electrostatically robust due to integrated protection diodes
- Low conduction losses due to low on-state resistance