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BUK9219-55A - N-Channel MOSFET

General Description

N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.

Product availability: BUK9219-55A in SOT428 (D-PAK).

2.

Key Features

  • s s s s TrenchMOS™ technology Q101 compliant 175 °C rated Logic level compatible. 3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BUK9219-55A TrenchMOS™ logic level FET M3D300 Rev. 01 — 24 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance. Product availability: BUK9219-55A in SOT428 (D-PAK). 2. Features s s s s TrenchMOS™ technology Q101 compliant 175 °C rated Logic level compatible. 3. Applications s Automotive and general purpose power switching: x 12 V and 24 V loads. x Motors, lamps and solenoids. c c 4. Pinning information Table 1: Pin 1 2 3 mb Pinning - SOT428 (D-PAK), simplified outline and symbol Description gate (g) mb Simplified outline Symbol drain (d) source (s) drain (d) 2 1 Top view 3 MBK091 d g s MBB076 SOT428 (D-PAK) 1.