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BUK9230-100B - TrenchMOS logic level FET

General Description

N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology.

Key Features

  • s Very low on-state resistance s 185 °C rated s Q101 compliant s Logic level compatible. 1.3.

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Full PDF Text Transcription (Reference)

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BUK9230-100B TrenchMOS™ logic level FET M3D300 Rev. 01 — 22 January 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology. 1.2 Features s Very low on-state resistance s 185 °C rated s Q101 compliant s Logic level compatible. 1.3 Applications s Automotive systems s Motors, lamps and solenoids s 12 V, 24 V, and 42 V loads s General purpose power switching. 1.4 Quick reference data s EDS(AL)S ≤ 150 mJ s ID ≤ 47 A s RDSon = 25 mΩ (typ) s Ptot ≤ 167 W. 2.