Datasheet Summary
TrenchMOS™ logic level FET
M3D300
Rev. 01
- 22 January 2004
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology.
1.2 Features s Very low on-state resistance s 185 °C rated s Q101 pliant s Logic level patible.
1.3 Applications s Automotive systems s Motors, lamps and solenoids s 12 V, 24 V, and 42 V loads s General purpose power switching.
1.4 Quick reference data s EDS(AL)S ≤ 150 mJ s ID ≤ 47 A s RDSon = 25 mΩ (typ) s Ptot ≤ 167 W.
2. Pinning information
Table 1: Pin 1 2 3 mb Pinning
- SOT428 (D-PAK), simplified outline and...