BUK9607-30B Datasheet | NXP Semiconductors

Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) Trench MOS™ technology. Product availability: BUK9507-30B in SOT78 (TO-220AB) BUK9607-30B in SOT404 (D2-PAK). 1.2 Features s Low on-state resistance s 175 °C rated s Q101 pliant s Logic level patible. 1.3 Applications s Automotive systems s Motors, lamps and solenoids s 12 V loads s General purpose power switching. 1.4 Quick reference data s EDS(AL)S ≤ 327 m J s ID ≤ 75 A s RDSon = 5.9 mΩ (typ) s Ptot ≤ 157 W. 2. Pinning information Table 1: Pin 1 2 3 mb Pinning - SOT78 and SOT404, simplified outline and symbol Description gate (g) drain (d) source (s) mounting base; connected to drain (d) 2 1 MBK106 Simplified outline mb mb Symbol d [1] g s MBB076 MBK116 1 2 3 SOT78 (TO-220AB) [1] It is not possible to make connection to pin 2 of the SOT404 package. SOT404 (D2-PAK) .. Philips Semiconductors BUK95/9607-30B Trench MOS™ logic level FET 3. Limiting values Table 2: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VDGR VGS ID Parameter drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tmb = 25 °C; VGS = 5 V; Figure 2 and 3 Tmb = 100 °C; VGS = 5 V; Figure 2 IDM Ptot Tstg Tj IDR IDRM EDS(AL)S peak drain current total power dissipation storage temperature junction temperature reverse drain current (DC) peak reverse drain current non-repetitive drain-source avalanche energy Tmb = 25 °C Tmb = 25 °C; pulsed; tp ≤ 10 µs unclamped inductive load; ID = 75 A; VDS ≤ 30 V; VGS = 5 V; RGS = 50 Ω; starting Tj = 25 °C [1] [2] [1] [2] [1] Conditions RGS = 20 kΩ Min - 55 - 55 - Max 30 30 ±15 108 75 75 435 157 +175 +175 108 75 435 327 Unit V V V A A A A W °C °C A A A m J Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 Tmb = 25 °C; Figure 1 Source-drain diode Avalanche ruggedness [1] [2] Current is limited by power dissipation chip rating. Continuous...