BUK9C07-65BIT
BUK9C07-65BIT is N-channel TrenchPLUS logic level FET manufactured by NXP Semiconductors.
description
N-channel enhancement mode field-effect power transistor in SOT427. Device is manufactured using NXP High-Performance Trench PLUS technology, featuring very low on-state resistance, integrated current sensing transistor and over temperature protection diodes.
1.2 Features and benefits
- AEC-Q101 pliant
- Low conduction losses due to low on-state resistance
1.3 Applications
- Lamp switching
- Motor drive systems
- Power distribution
- Solenoid drivers
1.4 Quick reference data
Table 1. Symbol RDSon Quick reference data Parameter drain-source on-state resistance ratio of drain current to sense current drain-source breakdown voltage Conditions VGS = 5 V; ID = 25 A; Tj = 25 °C; see Figure 12; see Figure 13 Tj = 25 °C; VGS = 5 V; see Figure 14 ID = 250 µA; VGS = 0 V; Tj = 25 °C Min Typ 6 Max Unit 7 mΩ
Static characteristics
ID/Isense V(BR)DSS
1086 1206 1327 A/A 1 8 5 65 V
..
NXP Semiconductors
N-channel Trench PLUS logic level FET
2. Pinning information
Table 2. Pin 1 2 3 4 5 6 7 mb Pinning information Symbol Description
G IS A D K KS S D gate current sense anode drain cathode Kelvin source source mb
4 123 567 G IS S KS C
003aad829
Simplified outline mb
Graphic symbol
SOT427 (D2PAK)
3. Ordering information
Table 3. Ordering information Package Name BUK9C07-65BIT D2PAK Description
Version plastic single-ended surface-mounted package (D2PAK); 7 leads SOT427 (one lead cropped) Type number
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02
- 17 June 2010
2 of 16 w w w . D a t a S h e e t 4 U . c o m
NXP Semiconductors
N-channel Trench PLUS logic level FET
4. Limiting values
Table 4. Symbol VDS VDGR VGS ID IDM Ptot Tstg Tj Visol(FET-TSD) Limiting values Parameter drain-source voltage drain-gate voltage gate-source voltage drain current peak drain current total power dissipation storage temperature junction...
